inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1230 description high dc current gain : h fe = 1500(min.)@ i c = 4a, v ce = 3v collector-emitter breakdown voltage- : v (br)ceo = 100v(min.) complement to type 2sb913 applications designed for motor drivers, printer hammer drivers, relay drivers, voltage regulat o r control applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 110 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 6 v i c collector current-continuous 8 a i cm collector current-peak 12 a collector power dissipation @t a =25 2.5 p c collector power dissipation @t c =25 60 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1230 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 50ma; r be = 100 v v (br)cbo collector-base breakdown voltage i c = 5ma; i e = 0 110 v v ce (sat) collector-emitter saturation voltage i c = 4a, i b = 8ma b 1.5 v v be (sat) base-emitter saturation voltage i c = 4a, i b = 8ma b 2.0 v i cbo collector cutoff current v cb = 80v, i e = 0 0.1 ma i ebo emitter cutoff current v eb = 5v; i c = 0 3.0 ma f t current-gain?bandwidth product i c = 4a; v ce = 5v 20 mhz h fe dc current gain i c = 4a; v ce = 3v 1500 switching times t on turn-on time 0.6 s t stg storage time 4.8 s t f fall time i c = 4a, i b1 = -i b2 = 8ma; r l = 12.5 ; v cc = 50v 1.6 s isc website www.iscsemi.cn
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